Metal semiconductor contacts
US11688785B2 · kind B2 · utility
0Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2020 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Oct 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The semiconductor device comprises a substrate having a first surface and a second surface, the substrate comprising a wide bandgap semiconductor material. An epitaxial layer is on the first surface of the substrate and a metal germanosilicide layer is above the second surface of the substrate. The metal germanosilicide layer forms an ohmic contact to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.