Lamb wave resonators in single-crystal substrate
US11689179B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 13, 2019 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Nov 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02007
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic waveguide having high-Q resonator characteristics is disclosed and a fabrication method is described. Various waveguide-based test-vehicles, implemented in single crystal silicon and transduced by thin aluminum nitride films, are demonstrated. Silicon resonators with type-I and type-II dispersion characteristics are presented to experimentally justify the analytical mode synthesis technique for realization of high quality-factor silicon Lamb wave resonators. An analytical design procedure is also presented for geometrical engineering of the waveguides to realize high-Q resonators without the need for geometrical suspension through narrow tethers or rigid anchors. The effectiveness of the dispersion engineering methodology is verified through development of experimental test-vehicles in 20 μm-thick single-crystal silicon (SCS) waveguides with 500 nm aluminum nitride transducers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.