Patent · US Active

Sensor element for a potentiometric sensor and respective manufacturing method

US11692961B2 · kind B2 · utility

0Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 18, 2020
Grant dateJul 4, 2023
Priority date
Expiry dateAug 7, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N27/36
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The present disclosure relates to a sensor element for a potentiometric sensor, comprising a substrate formed from a metal alloy and an ion-selective enamel layer arranged on the substrate, wherein the metal alloy comprises at least one transition metal and wherein the ion-selective enamel layer contains a proportion of an oxide of the transition metal, and wherein an electrically conductive transition zone is arranged between the substrate and the enamel layer and contains the transition metal in a plurality of different oxidation states.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.