High voltage light-emitting diode and method of producing the same

US11695098B2 · kind B2 · utility

Assignee

• XIAMEN CHANGELIGHT CO., LTD. · CN

Inventors

• Yingce LIU · Xiamen, CN
• Junxian Li · Zhejiang, CN
• Zhao Liu · Xiamen, CN
• Zhendong Wei · Xiamen, CN
• Xuan Huang · Xiamen, CN

Key dates

• Filing date: Nov 11, 2019
• Grant date: Jul 4, 2023
• Expiry date: Jun 30, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0364

Abstract

A light-emitting diode (LED) sub-chip and a method of producing the same are provided. The LED sub-chip comprises an epitaxial layer disposed on a growth substrate, where the epitaxial layer comprises a plurality of electrodes. The groove disposed between the LED sub-chip and a second LED sub-chip, where the groove penetrates through the epitaxial layer separating the two sub-chips. The bridge insulating layer at least partially covering a sidewall of the groove, where the sidewall comprises a first surface and a second surface above the first surface, where the texture of the second surface is less granular than a texture of the first surface. The bridge electrode on the bridge insulating layer, where the bridge electrode connects respective electrodes of the two sub-chips at the first surface.