Chip-scale resonant gyrator for passive non-reciprocal devices
US11695382B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2020 |
| Grant date | Jul 4, 2023 |
| Priority date | — |
| Expiry date | Sep 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2/001
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.