Patent · US Active

Semiconductor device

US11695415B2 · kind B2 · utility

0Cited by
4References
2Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 23, 2021
Grant dateJul 4, 2023
Priority date
Expiry dateDec 23, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K17/223
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A power-on reset circuit 10 has: an enhancement-type PMOS transistor P1 whose source is connected to VDD and whose drain is connected to node VJG; a depletion-type NMOS transistor D1 whose drain is connected to the node VJG; a first resistor portion having resistors R1, R2 that are connected in series, and whose one end is connected to a source of the depletion-type NMOS transistor D1, and whose another end is connected to GND, and at which a region between the resistors R1, R2 is connected to a gate of the enhancement-type PMOS transistor P1; and an inverter whose input is connected to the node VJG, and that outputs a reset signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.