Low LOI tellurium-lithium-silicon-zirconium frit system and conductive paste and application thereof
US11697612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2022 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | Feb 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/311
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present disclosure discloses a low LOI tellurium-lithium-silicon-zirconium frit system and a conductive paste and application thereof, and belongs to the field of conductive paste. In the low LOI tellurium-lithium-silicon-zirconium frit system, components of the frit are 24%-40% TeO2, 18%-24% Li2O, 4%-13% SiO2, 0-2% ZrO2, and a balance MOx, and M is one or a mixture of Na, K, Mg, Ca, Sr, Ti, V, Cr, Mo, W, Mn, Cu, Ag, Zn, Cd, B, Al, Ga, Tl, Ge, Pb, P, and Bi. There is no need to add additional surfactants, a viscosity change of the conductive paste prepared after standing for 30 days is less than 20%, the conductive paste has good stability, the water related weight loss of inorganic oxide of the conductive paste is less than 1.6%, and the application performance of the conductive paste is not affected after standing for 30 days.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.