Qubit circuits with deep, in-substrate components

US11699091B2 · kind B2 · utility

Assignee

• Massachusetts Institute of Technology · US

Inventors

• Wayne H. Woods, Jr. · Burlington, US
• Danna Rosenberg · Arlington, US
• Cyrus Hirjibehedin · Newton, US
• Donna-Ruth W. Yost · Acton, US
• Justin Mallek · Burlington, US
• Andrew J. Kerman · Arlington, US
• Mollie Schwartz · Cambridge, US
• Jonilyn L. Yoder · Billerica, US
• William D. Oliver · Arlington, US
• Thomas Hazard · Craydon Court, US

Key dates

• Filing date: Jan 4, 2021
• Grant date: Jul 11, 2023
• Expiry date: Mar 14, 2041

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B82Y40/00
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Qubit circuits having components formed deep in a substrate are described. The qubit circuits can be manufactured using existing integrated-circuit technologies. By forming components such as superconducting current loops, inductive, and/or capacitive components deep in the substrate, the footprint of the qubit circuit integrated within the substrate can be reduced. Additionally, coupling efficiency to and from the qubit can be improved and losses in the qubit circuit may be reduced.