Patent · US Active

Memory system with burst mode having logic gates as sense elements

US11699483B2 · kind B2 · utility

0Cited by
4References
20Claims
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Key dates

Filing dateMay 28, 2021
Grant dateJul 11, 2023
Priority date
Expiry dateJun 2, 2041

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02D10/00
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Memory systems with burst mode having logic gates as sense elements and related methods are provided. A memory system comprises a memory array including a first set of memory cells coupled to a first wordline, a second set of memory cells coupled to a second wordline, and a plurality of sense elements, not including any sense amplifiers. The control unit is configured to generate control signals for: in response to a burst mode read request, simultaneously: (1) asserting a first wordline signal on the first wordline coupled to each of a plurality of first set of bitlines, and (2) asserting a second wordline signal on the second wordline coupled to each of a plurality of second set of bitlines, and as part of a burst, outputting data corresponding to a subset of each of the first set of memory cells and the second set of memory cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.