Metal etching with in situ plasma ashing
US11699596B2 · kind B2 · utility
0Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2019 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | Nov 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3342
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.