Semiconductor device and manufacturing method thereof
US11699631B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2021 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | Mar 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/37001
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device includes circuit substrate, first semiconductor die, thermal interface material, package lid. First semiconductor die is disposed on and electrically connected to circuit substrate. Thermal interface material is disposed on first semiconductor die at opposite side of first semiconductor die with respect to circuit substrate. Package lid extends over first semiconductor die and is bonded to the circuit substrate. Package lid includes roof, footing, and island. Roof extends along first direction and second direction perpendicular to first direction. Footing is disposed at peripheral edge of roof and protrudes from roof towards circuit substrate along third direction perpendicular to first direction and second direction. Island protrudes from roof towards circuit substrate and contacts thermal interface material on first semiconductor die. Island is disconnected from footing along second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.