Non-diffusion type photodiode

US11699771B2 · kind B2 · utility

Assignee

• LandMark Optoelectronics Corporation · TW

Inventors

• Huang Pan · Tainan, TW
• Hung-Wen Huang · New Taipei, TW
• Yung-Chao Chen · Tainan, TW
• Yi-Hsiang Wang · Hsinchu, TW

Key dates

• Filing date: Jun 24, 2021
• Grant date: Jul 11, 2023
• Expiry date: Jul 21, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/14

Abstract

A non-diffusion type photodiode is described and has: a substrate, a buffer layer, a light absorption layer, an intermediate layer, and a multiplication/window layer. The buffer layer is disposed on the substrate. The light absorption layer is disposed on the buffer layer. The intermediate layer is disposed on the light absorption layer and has a first boundary, wherein the intermediate layer is an I-type semiconductor layer or a graded refractive index layer. The multiplication/window layer is disposed on the intermediate layer and has a second boundary, wherein in a top view, the first boundary surrounds the second boundary, and a distance between the first boundary and the second boundary is greater than or equal to 1 micrometer. The non-diffusion type photodiode can reduce generation of dark current.