Semiconductor LED and method of manufacturing the same
US11699775B2 · kind B2 · utility
1Cited by
7References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2020 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | May 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/818
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.