Patent · US Active

Photonic devices

US11703637B2 · kind B2 · utility

0Cited by

11References

1Claims

0Family size

Assignees

RAYTHEON BBN TECHNOLOGIES CORP. · US
Raytheon Company · US

Inventors

Mohammad Soltani · Belmont, US
Eduardo M. Chumbes · Andover, US

Key dates

Filing date	Jan 20, 2022
Grant date	Jul 18, 2023
Priority date	—
Expiry date	Jan 20, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/149
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A Group III-Nitride quantum well laser including a distributed Bragg reflector (DBR). In some embodiments, the DBR includes Scandium. In some embodiments, the DBR includes Al1-xScxN, which may have 0<x≤0.45.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.