Patent · US Active

Error avoidance in memory device

US11704211B1 · kind B1 · utility

3Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 8, 2021
Grant dateJul 18, 2023
Priority date
Expiry dateDec 8, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2201/82
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Techniques for avoiding uncorrectable errors in a memory device can include detecting a correctable error pattern of a memory page of a memory device, and determining that the correctable error pattern of the memory page satisfies a page migration condition. Upon satisfying the page migration condition, write accesses to the memory page are prevented from reaching a memory controller of the memory device. The contents of the memory page are then migrated to a reserved page, and a mapping table is updated to replace accesses to the memory page with accesses to the reserved page.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.