Patent · US Active

Terminal configuration and semiconductor device

US11705399B2 · kind B2 · utility

0Cited by
1References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 28, 2022
Grant dateJul 18, 2023
Priority date
Expiry dateJun 28, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/181
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.