Transistor array substrate and electronic device including same
US11705463B2 · kind B2 · utility
0Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2020 |
| Grant date | Jul 18, 2023 |
| Priority date | — |
| Expiry date | Mar 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/131
Abstract
Provided are a transistor array substrate and an electronic device. A first active layer includes a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area. A gate insulating film is disposed on the first active layer. A gate electrode is disposed on the gate insulating film to overlap a portion of the channel area of the first active layer. The gate electrode overlaps a portion of at least one area of the first and second areas of the first active layer. Deteriorations in the channel area are prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.