Broadband power transistor devices and amplifiers with output T-match and harmonic termination circuits and methods of manufacture thereof
US11705872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2020 |
| Grant date | Jul 18, 2023 |
| Priority date | — |
| Expiry date | Sep 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B2001/045
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element (e.g., first wirebonds) connected between the transistor output terminal and a quasi RF cold point node, a second inductive element (e.g., second wirebonds) connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the quasi RF cold point node and the ground reference node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.