RF circuit and enclosure having a micromachined interior using semiconductor fabrication
US11706851B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2022 |
| Grant date | Jul 18, 2023 |
| Priority date | — |
| Expiry date | Aug 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/2053
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.