Patent · US Active

Photonic devices

US11709314B2 · kind B2 · utility

0Cited by

11References

3Claims

0Family size

Assignees

RAYTHEON BBN TECHNOLOGIES CORP. · US
Raytheon Company · US

Inventors

Mohammad Soltani · Belmont, US
Eduardo M. Chumbes · Andover, US

Key dates

Filing date	Jan 20, 2022
Grant date	Jul 25, 2023
Priority date	—
Expiry date	Jan 20, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/149
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Photonic devices having a quantum well structure that includes a Group III-N material, and a Al1-xScxN cladding layer disposed on the quantum well structure, where 0<x≤0.45, the Al1-xScxN cladding layer having a lower refractive index than the index of refraction of the quantum well structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.