Laterally diffused metal oxide semiconductor device and method for manufacturing the same
US11710787B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2021 |
| Grant date | Jul 25, 2023 |
| Priority date | — |
| Expiry date | Oct 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A laterally diffused metal oxide semiconductor device can include: a base layer; a source region and a drain region located in the base layer; a first dielectric layer located on a top surface of the base layer and adjacent to the source region; a voltage withstanding layer located on the top surface of the base layer and located between the first dielectric layer and the drain region; a first conductor at least partially located on the first dielectric layer; a second conductor at least partially located on the voltage withstanding layer; and a source electrode electrically connected to the source region, where the first and second conductors are spatially isolated, and the source electrode at least covers a space between the first and second conductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.