TFT substrate and display device including the same
US11710793B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2019 |
| Grant date | Jul 25, 2023 |
| Priority date | — |
| Expiry date | Jun 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A thin film transistor (TFT) substrate includes a TFT on the substrate. The TFT includes an active patterned layer which is made of a polycrystalline silicon, which includes a channel portion, a source portion and a drain portion, and in which protrusions are formed at boundaries between grains and recess spaces are formed between the protrusions. A barrier pattern film fills the recess spaces and forms a flat surface with the protrusions. A gate electrode is on a gate insulating layer located on the barrier pattern film and the protrusions and overlays or corresponds to the channel portion. A source electrode and a drain electrode are on the gate electrode and respectively contact the source portion and the drain portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.