Photoelectric devices and image sensors and electronic devices
US11711930B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2021 |
| Grant date | Jul 25, 2023 |
| Priority date | — |
| Expiry date | Sep 27, 2041 |
Classification
- Technology area (CPC —)General
Abstract
A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λmax1) of the first photoelectric conversion layer and a peak absorption wavelength (λmax2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.