Elementary cell comprising a resistive memory and associated method of initialization

US11711988B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Anthonin Verdy · Grenoble, FR

Key dates

• Filing date: Dec 16, 2020
• Grant date: Jul 25, 2023
• Expiry date: Feb 19, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/10

Abstract

An aspect of the invention relates to an elementary cell that includes a breakdown layer made of dielectric having a thickness that depends on a breakdown voltage, a device and a non-volatile resistive memory mounted in series, the device including an upper selector electrode, a lower selector electrode, a layer made in a first active material, referred to as active selector layer, the device being intended to form a volatile selector; the memory including an upper memory electrode, a lower memory electrode, a layer made in at least one second active material, referred to as active memory layer.