Silicon carbide and nitride structures on a substrate
US11714231B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | May 14, 2020 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Apr 15, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/048
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor structure comprises a substrate; an oxide layer on the substrate; a set of group III nitride layers on the oxide layer; and a set of silicon carbide layers located on the set of group III nitride layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.