Semiconductor device and voltage generation method
US11714440B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 23, 2022 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Mar 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/347
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A semiconductor device includes first to N-th voltage output circuits each outputting an output voltage and outputs a feedback voltage having a voltage value corresponding to the output voltage, and a differential circuit including first to N-th primary side transistors to which N feedback voltages are input and that individually flow first to N-th currents through a first node, a secondary side transistor that flows a reference current corresponding to a reference voltage through the first node, and a current mirror circuit as an active load. The current mirror circuit includes first to N-th primary side load transistors individually coupled in cascade to the first to N-th primary side transistors, a secondary side load transistor coupled in cascade to the secondary side transistor and generates a voltage at a connection point between the secondary side transistor and the secondary side load transistor as a control voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.