Super junction power device and method of making the same
US11715758B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2021 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Jul 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
The present invention provides a power device with super junction structure (or referred to as super junction power device) and a method of making the same. When making a super junction power device, impurity of a second conductive type may be implanted into an epitaxial layer of a first conductive type to form a floating island of the second conductive type and a pillar of the second conductive type successively through a super junction mask (or reticle) after forming the epitaxial layer of the first conductive type, directly through a well mask (or reticle) before or after forming a well of the second conductive type, and directly through a contact mask (or reticle) before or after forming a contact structure. Multiple epitaxial processes and deep trench etching process may not be needed. Therefore, the process is simple, the cost is low and yield and reliability are high. Because the super junction power device of the present invention has both the floating island of the second conductive type and the pillar of the second conductive type, in open state, a breakdown voltage may be raised and both Miller capacitance and input capacitance can be decreased and in on state, an on-sta…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.