Quantum well-based LED structure enhanced with sidewall hole injection
US11715813B2 · kind B2 · utility
0Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 2021 |
| Grant date | Aug 1, 2023 |
| Priority date | — |
| Expiry date | Aug 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A light emitting diode (LED) structure includes a semiconductor template having a template top-surface, an active quantum well (QW) structure formed over the semiconductor template, and a p-type layer. The p-type layer has a bottom-surface that faces the active QW and the template top-surface. The bottom-surface includes a recess sidewall. The recess sidewall of the p-type layer is configured for promoting injection of holes into the active QW structure through a QW sidewall of the active QW structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.