Polishing composition, polishing method, and method of producing semiconductor substrate
US11718768B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Feb 9, 2021 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Feb 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A polishing composition according to the present invention contains silica, a nitrogen-containing alkaline compound, and hydrogen peroxide, in which a content of the hydrogen peroxide is more than 0% by mass and less than 0.03% by mass with respect to the total mass of the polishing composition, and a pH exceeds 9.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.