Method for testing lifetime of surface state carrier of semiconductor
US11719739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2020 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Jul 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02S99/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for testing a lifetime of a surface state carrier of a semiconductor, including the following steps, 1) a narrow pulse light source is used to emit a light pulse, and coupled to an interior of a near-field optical probe, and the near-field optical probe produces a photon-generated carrier on a surface of a semiconductor material under test through excitation. 2) The excited photon-generated carrier is concentrated on the surface of the semiconductor material, and recombination is conducted continuously with a surface state as a recombination center. 3) A change in a lattice constant is produced due to an electronic volume effect, a stress wave is produced, and a signal of the stress wave is detected in a high-frequency broadband ultrasonic testing mode. 4) Fitting calculation is conducted on the signal of the stress wave to obtain the lifetime of the surface state carrier τc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.