Resist compound, method of forming pattern using the same, and method of manufacturing semiconductor device using the same
US11720022B2 · kind B2 · utility
1Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Feb 12, 2020 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Jun 3, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a resist compound, a method for forming a pattern using the same, and a method for manufacturing a semiconductor device. According to the present disclosure, the compound may be represented by Formula 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.