Methods for depositing III-alloys on substrates and compositions therefrom
US11721550B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2021 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Mar 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02634
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing III-V alloys on substrates and compositions therefrom. A first layer comprises a Group III element. A second layer comprises a silica. A substrate has a surface. The second layer is deposited onto a first layer. The depositing is performed by a sol-gel method. The second layer is exposed to a precursor that comprises a Group V element. At least one of the precursor or the Group V element diffuse through the silica. The first layer is transformed into a solid layer comprising a III-V alloy, wherein at least a portion of the first layer to a liquid. The silica retains the liquified first layer, enabling at least one of the precursor or the Group V element to diffuse into the liquid, resulting in the forming of the III-V alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.