Micro-LED array device based on III-nitride semiconductors and method for fabricating same
US11721674B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2020 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Mar 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Micro-LED array device based on III-nitride semiconductors and a method for fabricating the same are provided. The Micro-LED array device includes arrayed sector mesa structures that are formed by etching to penetrate through a p-type GaN layer and a quantum-well active layer and deep into an n-type GaN layer, a p-type electrode array deposited by evaporation on the p-type GaN layer of sector arrays, and an n-type electrode array deposited by evaporation on the n-type GaN layer. The n-type electrode array forms blocking walls to isolate the sector mesas from one another. The blocking walls, and each of the blocking walls and the annular structure surrounding the sector mesa are connected to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.