Self-aligned contact

US11721728B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Sipeng Gu · Clifton Park, US
• Jiehui Shu · Clifton Park, US
• Halting Wang · Clifton Park, US
• Yanping Shen · Saratoga Springs, US

Key dates

• Filing date: Jan 30, 2020
• Grant date: Aug 8, 2023
• Expiry date: Nov 6, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to self-aligned contacts and methods of manufacture. The structure includes: adjacent diffusion regions located within a substrate material; sidewall structures above an upper surface of the substrate material, aligned on sides of the adjacent diffusion regions; and a contact between the sidewall structures and extending to within the substrate material between and in electrical contact with the adjacent diffusion regions.