IGBT power device
US11721749B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2019 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Dec 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
Abstract
Provided is an insulated gate bipolar transistor power device. The IGBT power device includes a gate dielectric layer located above the two p-type body regions and the n-type drift region between the two p-type body regions, an n-type floating gate located above the gate dielectric layer; a gate located above the gate dielectric layer and the n-type floating gate; an insulating dielectric layer between the gate and the n-type floating gate; a first opening located in the gate dielectric layer, where the n-type floating gate is in contact with one of the two p-type body regions through the first opening to form a p-n junction diode; and a second opening located in the gate dielectric layer, where the n-type floating gate is in contact with the other of the two p-type body regions through the second opening to form the p-n junction diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.