Light-emitting diode device and method for manufacturing the same

US11721789B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• JIANGBIN ZENG · Xiamen, CN
• Anhe HE · Xiamen, CN
• Ling-yuan HONG · Xiamen, CN
• Kang-Wei PENG · Xiamen, CN
• Su-Hui Lin · Xiamen, CN
• Chia-Hung Chang · Xiamen, CN

Key dates

• Filing date: Jun 13, 2022
• Grant date: Aug 8, 2023
• Expiry date: Jun 13, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.