Acoustic wave element
US11722121B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2018 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Aug 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/14541
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic wave element includes an IDT electrode including electrode fingers, a first substrate on an upper surface of which the IDT electrode is located, which has a thickness of less than 2 times a repetition interval of the electrode fingers and is configured by a piezoelectric crystal, a second substrate bonded to a lower surface of the first substrate, and configured by an Si single crystal having a plane orientation of a (100) plane or (110) plane or a plane equal to them, in which substrate a crystal axis of the Si single crystal parallel to a substrate surface of Si single crystal is inclined at any angle of 25° to 65°, 115° to 155°, 205° to 245°, and 295° to 345° relative to a direction of propagation of an acoustic wave when viewed from the upper surface of the superposed first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.