Low-noise integrated post-processed photodiode
US11723223B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 26, 2021 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Jan 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K30/82
Abstract
A pixel, is provided the pixel comprising: a photodiode structure built on top of an integrated circuit generating a charge; the integrated circuit comprising at least one semiconductor material and at least one interconnect layer; the at least one interconnect layer comprises an interconnect to facilitate charge flowing into a collection node disposed in the semiconductor material; the interconnect being in contact with a doped contact diffusion disposed proximate to the collection node; a transfer transistor disposed between the collection node and a conversion node, the conversion node coupled to an active transistor; the pixel having a reset configured to reset the conversion node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.