In-situ laser annealing of Te growth defects in CdZnTe (ilast-czt)
US11725300B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jun 13, 2022 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Jun 13, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B30/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement includes a laser mounted outside the chamber which radiates a beam of energy to locally melt precipitates and inclusions. The furnace includes a mechanism to position the laser vertically to, at or near the interface between the formed crystal and crystal melt material above the formed crystal. The crystal material can be CdZnTe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.