Patent · US Active

Field-effect transistor sensor

US11726056B2 · kind B2 · utility

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11Claims

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Assignee

UNIVERSITA' DEGLI STUDI DI BARI ALDO MORO · IT

Inventors

Luisa Torsi · Bari, IT
Gerardo Palazzo · Bari, IT
Gaetano Scamarcio · Bari, IT

Key dates

Filing date	May 22, 2018
Grant date	Aug 15, 2023
Priority date	—
Expiry date	Jan 9, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG01N27/4145
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Described herein is a field effect transistor sensor including: a substrate, a source electrode, a drain electrode, a gate electrode functionalized with a layer of biological recognition elements, a source-drain channel and a semiconductor layer. The layer of biological recognition elements of the gate electrode is patterned into a plurality of uncoupled domains.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.