Method for inspecting a reticle, a method for manufacturing a reticle, and a method for manufacturing a semiconductor device using the same
US11726398B2 · kind B2 · utility
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Key dates
| Filing date | Jul 27, 2022 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Jul 27, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/95676
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for inspecting a reticle including a reflective layer on a reticle substrate is provided. The method may include loading the reticle on a stage, cooling the reticle substrate to a temperature lower than a room temperature, irradiating a laser beam to the reflective layer on the reticle substrate, receiving the laser beam using a photodetector to obtain an image of the reflective layer, and detect a particle defect on the reflective layer or a void defect in the reflective layer based on the image of the reflective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.