Lithography process method for defining sidewall morphology of lithography pattern
US11726400B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 7, 2020 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Oct 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure discloses a lithography process method for defining sidewall morphology of a lithography pattern, comprising: Step 1: designing a mask, wherein a mask pattern is formed on the mask, the mask pattern being used to define a lithography pattern; the lithography pattern has a sidewall, and a mask side face pattern structure that defines sidewall morphology of the lithography pattern is provided on the mask pattern, the mask side face pattern structure having a structure that enables an exposure light intensity to gradually change; Step 2: coating a to-be-exposed substrate with a photoresist; Step 3: exposing the photoresist by using the mask, and then performing development to form the lithography pattern; and Step 4: performing post-baking. The present disclosure can define the sidewall morphology of a lithography pattern, facilitating formation of a lithography pattern sidewall with an inclined side face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.