Method for detecting environmental parameter in semiconductor fabrication facility
US11726465B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2022 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Aug 8, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor fabrication facility (FAB) is provided. The FAB includes a group of processing tools. The FAB also includes a number of sampling tubes connecting the group of processing tools. In addition, the FAB includes a sampling station which includes a connection port, a valve manifold box and a controller. The valve manifold box is used for switching a gas sample from one of the processing tools to the connection port. The controller is sued for controlling the connection of the valve manifold box and the sampling tubes. The FAB further includes a metrology module. The metrology module is connected to the connection port of the sampling station and is used to perform a measurement of a parameter related to the gas sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.