Ion implanter and ion implantation method
US11728132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2022 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Feb 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30455
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam characteristics of the ion beam, a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other, and an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.