Insulating substrate and dual-side cooled power module using the same
US11728239B2 · kind B2 · utility
2Cited by
0References
15Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 23, 2021 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Aug 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating substrate provided between the semiconductor chip and a cooler in the dual-side cooled power module includes: an inner metal layer configured to face the semiconductor chip; an outer metal layer configured to face the cooler; and an insulating layer interposed between the inner metal layer and the outer metal layer, wherein at least one inner thermal diffusion inductor of a plurality of inner thermal diffusion inductors is inserted into the inner metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.