Semiconductor devices and methods of manufacturing semiconductor devices
US11728280B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2021 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Nov 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one example, an electronic device includes a substrate comprising a substrate top side, a substrate bottom side, and outward terminals. An electronic component is connected to the outward terminals. External interconnects are connected to the outward terminals and include a first external interconnect connected to a first outward terminal. A lower shield is adjacent to the substrate bottom side and is laterally between the external interconnects. The lower shield is electrically isolated from the first external interconnect by one or more of 1) a dielectric buffer interposed between the lower shield and the first external interconnect; or 2) the lower shield including a first part and a second part, the first part being laterally separated from the second part by a first gap, wherein the first part laterally surrounds lateral sides of the first external interconnect; and the second part is vertically interposed between the first outward terminal and the first external interconnect. Other examples and related methods are also disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.