Patent · US Active

Semiconductor device

US11728300B2 · kind B2 · utility

0Cited by
7References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 15, 2021
Grant dateAug 15, 2023
Priority date
Expiry dateNov 5, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/181
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor substrate, an integrated device ort the semiconductor substrate, a first redistribution layer on the semiconductor substrate, the first redistribution layer having first conductive patterns electrically connected to the integrated device, a second redistribution layer on the first redistribution layer, the second redistribution layer having second conductive patterns connected to the first conductive patterns, and third conductive patterns on a top surface of the second redistribution layer. The third conductive patterns include pads connected to the second conductive patterns, under-bump pads spaced apart from the pads, a grouping pattern between the pads and an outer edge of the second redistribution layer, and wiring lines that connect the under-bump pads to the pads and connect the pads to the grouping pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.