Semiconductor device
US11728410B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2021 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Jul 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A semiconductor device includes a substrate having a trench, a conductive pattern in the trench, a spacer structure on a side surface of the conductive pattern, and a buried contact including a first portion apart from the conductive pattern by the spacer structure and filling a contact recess, and a second portion on the first portion having a pillar shape with a width smaller than that of a top surface of the first portion. The spacer structure includes a first spacer extending along the second portion of the buried contact on the first portion of the buried contact and contacting the buried contact, a second spacer extending along the first spacer, and a third spacer extending along the side surface of the conductive pattern and the trench and apart from the first spacer by the second spacer, the first spacer includes silicon oxide, and the second spacer includes silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.