High electron mobility transistor
US11728419B2 · kind B2 · utility
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5References
20Claims
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Key dates
| Filing date | Oct 28, 2020 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Mar 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high electron mobility transistor (HEMT) includes a channel layer comprising a group III-V compound semiconductor; a barrier layer comprising the group III-V compound semiconductor on the channel layer; a gate electrode on the barrier layer; a source electrode over gate electrode; a drain electrode spaced apart from the source electrode; and a metal wiring layer. A same layer of the metal wiring layer includes a gate wiring connected to the gate electrode, a source field plate connected to the source electrode, and a drain field plate connected to the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.