Semiconductor apparatus and manufacturing method thereof, and device
US11728441B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2021 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Oct 12, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A semiconductor apparatus includes a first semiconductor layer, a second semiconductor layer, and a structure provided between the first and second semiconductor layers. The semiconductor apparatus further includes a first electrode supported by a first insulating layer, a second electrode supported by a second insulating layer, a first wire bonded to the first electrode through a first opening provided in the first semiconductor layer, and a second wire bonded to the second electrode through a second opening provided in the first semiconductor layer, and an annular member made of a non-insulating material and provided between the first semiconductor layer and the first electrode. A distance from the second semiconductor layer to a first joint between the first electrode and the first wire is longer than a distance from the second semiconductor layer to a second joint between the second electrode and the second wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.